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NTK3134N Power MOSFET
20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723
Features
* * * * * * * * *
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V(BR)DSS RDS(on) TYP 0.20 W @ 4.5 V 20 V 0.26 W @ 2.5 V 0.42 W @ 1.8 V 0.62 W @ 1.5 V ID Max 890 mA 790 mA 700 mA 200 mA
N channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These are Pb-Free Devices
Applications
Load/Power Switching Interface Switching Logic Level Shift Battery Management for Ultra Small Portable Electronics
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current tp = 10 ms Steady State TA = 25C TA = 85C TA = 25C PD IDM TJ, TSTG TL ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 20 6 890 640 990 450 550 750 540 310 1.8 -55 to 150 260 mW A C C mA mW Unit V V mA
SOT-723 (3-LEAD)
3
1 Top View
2
1 - Gate 2 - Source 3 - Drain
MARKING DIAGRAM
KF M SOT-723 CASE 631AA STYLE 5 1 KF M = Specific Device Code = Date Code
Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
ORDERING INFORMATION
Device NTK3134NT1G NTK3134NT5G Package SOT-723* SOT-723* Shipping 4000 / Tape & Reel 8000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb-Free.
(c) Semiconductor Components Industries, LLC, 2006
1
December, 2006 - Rev. 0
Publication Order Number: NTK3134N/D
NTK3134N
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t = 5 s (Note 3) Junction-to-Ambient - Steady State Minimum Pad (Note 4) Symbol RqJA RqJA RqJA Max 280 228 400 Unit C/W
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, Reference to 25C VGS = 0 V, VDS = 16 V TJ = 25C TJ = 125C 20 18 1.0 2.0 0.5 mA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 4.5 V
VGS(TH) VGS(TH)/TJ RDS(on)
VGS = VDS, ID = 250 mA
0.45 2.4
1.2
V mV/C
VGS = 4.5 V, ID = 890 mA VGS = 2.5 V, ID = 780 mA VGS = 1.8 V, ID = 700 mA VGS = 1.5 V, ID = 200 mA
0.20 0.26 0.43 0.56 1.6
0.35 0.45 0.65 1.2
W
Forward Transconductance
gFS
VDS = 10 V, ID = 800 mA
S
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS = 0 V, f = 1 MHz, VDS = 16 V 79 13 9.0 120 20 15 pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 10 V, ID = 500 mA, RG = 10 W 6.7 4.8 17.3 7.4 ns
DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = 350 mA TJ = 25C 0.75 8.1 6.4 1.7 3.0 nC 1.2 V ns
VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A, VDD = 20 V
5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures
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NTK3134N
TYPICAL CHARACTERISTICS
2.0 2.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5 V to 2.2 V 1.5 1.8 V 1.0 TJ = 25C 1.6 V 0.5 1.5 V 1.4 V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0.75 1.0 1.25 VDS 5 V 1.5 2.0
1.0 TJ = 25C 0.5 TJ = 125C TJ = -55C 1.5 1.75 2.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.50 1.25 1.00 0.75 0.50 0.25 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE VOLTAGE (V) ID = 0.89 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.30
Figure 2. Transfer Characteristics
TJ = 25C 0.28 0.25 0.23 0.20 0.18 0.15 0.3 0.6 0.8 1.1 1.3 1.6 1.8 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 2.5 V
Figure 3. On-Resistance vs. Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 10,000 0.6 0.5 VGS = 1.8 V, ID = 710 mA 0.4 0.3 0.2 0.1 -60 -35 VGS = 4.5 V, ID = 1 A -10 15 40 65 90 115 140 10 VGS = 2.5 V, ID = 710 mA VGS = 1.5 V, ID = 200 mA IDSS, LEAKAGE (nA)
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
1000
TJ = 150C
TJ = 125C 100
5.0
10
15
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTK3134N
TYPICAL CHARACTERISTICS
140 120 C, CAPACITANCE (pF) 100 80 60 40 Coss 20 Crss 0 0 2 4 6 8 10 12 14 16 18 20 DRAIN-TO-SOURCE VOLTAGE (V) 1 1 10 RG, GATE RESISTANCE (W) 100 Ciss t, TIME (ns) td(off) 10 td(on) tr tf VGS = 0 V TJ = 25C 100 VDD = 10 V ID = 500 mA VGS = 4.5 V
Figure 7. Capacitance Variation
1.0 0.9 IS, SOURCE CURRENT (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.3 0.4 0.5 0.6 0.7 VGS = 0 V
Figure 8. Resistive Switching Time Variation vs. Gate Resistance
150C 125C 25C
TJ = -55C
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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NTK3134N
PACKAGE DIMENSIONS
SOT-723 CASE 631AA-01 ISSUE C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
-X- D b1 -Y-
3
A E
1 2
L C
HE
DIM A b b1 C D E e HE L
e
b 2X 0.08 (0.0032) X Y
MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25
INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098
STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157
0.40 0.0157
0.40 0.0157
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTK3134N/D

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